Experimental construction of Sb2(S,Se)3/In2S3 heterojunctions shows improved carrier mobility in photoanodes, suggesting better PEC efficiency.
Antimony sulfoselenide (Sb2(S,Se)3), a highly promising photovoltaic material, has garnered significant attention in solar cell applications. Sb2(S,Se)3 exhibits anisotropic carrier transport, with carrier mobility along the [hk1] direction being significantly higher than that along the [hk0] direction. In this work, [hk1]-oriented Sb2(S,Se)3 nanorods were epitaxially grown on 2D Bi2O2S nanosheets via a one-step hydrothermal method. Subsequently, an S-scheme heterojunction was constructed by integrating In2S3. This heterojunction not only compensates for the weak short-wavelength light absorption of the photoanode but also suppresses carrier recombination. Achieving 6.05 mA cm-2 at 1.23 VRHE, the composite photoanode confirms enhanced PEC performance through efficient carrier utilization. This work develops a hydrothermal methodology to synthesize quasi-1D Sb2(S,Se)3 nanorods and construct 1D-2D Sb2(S,Se)3/In2S3 heterostructures.
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Tan et al. (2025) studied this question.
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