FP semiconductor lasers based on lateral mode modulation

With the widespread application of Ethernet Passive Optical Network (EPON) technology, higher demands are placed on the output fiber power of devices. In the realm of semiconductor chips, increasing the power of semiconductor lasers stands as an effective approach. This paper proposes a Fabry-Perot (FP) semiconductor laser with lateral mode control based on step-index waveguide. This design aims to meet both power and divergence angle requirements. Through simulation and experimental verification, a series of chips have been successfully fabricated. Under a continuous current of 500 mA at room temperature, the output powers corresponding to ridge waveguide widths of 3 μm, 4 μm, and5μmare 182.06 mW, 198.23 mW, and 202.07 mW, respectively, with divergence angles of 15.31°, 17.00°, and 17.82°. In comparison, semiconductor lasers with ridge waveguide widths of 3 μm, 4 μm, and 5 μm from the same batch exhibit output powers of 136.26 mW, 224.72 mW, and 221.10 mW, respectively, with divergence angles of 40.22°, 43.01°, and42.56°. Although the power of the new laser slightly decreases, it demonstrates significant advantages in improving the divergence angle, which is acceptable. This innovation is poised to further enhance the output power of optical fibers, meeting the demands of practical optical communication networks. Additionally, it holds the potential for wide-ranging applications, characterized by its low cost and high yield rate.