Design and Fabrication of 1064-nm High Power Laterally-Coupled DFB Semiconductor Lasers

We report on our design and fabrication of 1064-nm laterally-coupled distributed feedback (LC-DFB) semiconductor lasers, in which, a 9 th order grating with λ/4 phase shift was incorporated, as well as investigating the effect of asymmetric phase shift (APS) on the device characteristics. It was found that the laser exhibited significantly higher output power when the phase-shifted position was closer to the rear facet. The results indicate that under the conditions of continuous-wave (CW) operation and the ambient temperature of 20°C, the output power reaches 362.3 mW when the injection current is 1 A, and the slope efficiency is about 0.4 W/A. The side-mode suppression ratio (SMSR) > 40 dB can be achieved for operation current in the range of 0.2 A to 1 A, which meets the requirement of single mode operation. This study provides valuable insights for the development of high-power LC-DFB semiconductor lasers with simple high-order grating fabrication process.