High-power wideband low-polarization semiconductor optical amplifier for 1.5μm band

This is the authors' abstract. We don't add key points for this paper.

Semiconductor optical amplifiers (SOAs) offer advantages such as high-speed direct modulation, wide wavelength coverage, and high integration, making them suitable for high-speed optical communication networks to enhance transmission efficiency and capacity. In long-distance high-speed optical communication systems, the use of polarization-insensitive SOAs (PISOAs) can improve signal stability, enhance transmission quality, reduce system complexity, and lower maintenance costs associated with polarization. However, existing SOAs suffer from high polarization sensitivity. To mitigate this issue, this study designs, simulates, and develops a 1.5 μm band SOA. The active region is composed of quaternary compound AlGaInAs, creating a strained quantum well due to compositional differences in the barrier and well materials, enabling the realization of PISOA. At an input power of 0 dBm, the device achieves a gain of 32.89 dB. At an input power of 10 dBm, the saturated output power is 228.7 mW with a gain of 13.59 dB, and the 3 dB gain bandwidth reaches 125 nm. At an input power of -20 dBm, the polarization sensitivity is less than 1.82 dB.