Simulation and analysis of solar cells based on InN/p-Si: influence on thickness, doping concentration, and temperature dependence

ABSTRACT The current research project intends to enhance solar cells' power and conversion efficiency based on InN/p-Si utilizing the PC1D simulator. A broad direct bandgap of Indium nitride (0.65 eV) makes it suitable for various applications. The InN-based solar cells show an excellent candidate for generating a higher efficiency device, incorporating well-established silicon substrate technology. The open-source PC1D is well-known software for simulating future solar devices without the need to fabricate real devices. The simulated area was adjusted to 10 cm2. The Si substrate and InN layer thicknesses were designed to be 350 μm and 1×10-3 μm, respectively. The n- and p-regions have doping concentrations of 1×1021 cm-3 and 1×1017 cm-3, respectively. This work analyses the influence of geometrical and technological aspects such as both n-p regions thickness, doping concentrations, and temperature dependency to enhance the conversion efficiency of these structures under the AM1.5G solar spectrum with intensity 0.1 W/cm2. It has been demonstrated that the growth of high-quality InN layers and p-type doping persists to be problematic. It appears challenging to find the most suitable material substrate for InN solar. To produce compatible solar cells with simple structures and cost-effective, however, extremely thin layers of n-layer material are required due to the high absorption coefficient of type III-nitrides. The results illustrate that by adjusting the optimized parameter at room temperature to the lowest temperature (200 K), the solar efficiency may increase up from 19.18% to 27.67%.