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Enhancing field emission in ultrascaled electronics improves the device performance and energy efficiency. Conventional lithography defines electrodes with a few-nanometer spacing on the cost of strengthened electron scattering and the reduced field enhancement factor, thus presenting challenges to enhance field emission at a small bias. Here, we used self-assembled nanorods with sub-5 nm spacing as electrodes to overcome these challenges. Intrinsic ballistic transport through high-crystallinity solution-synthesized nanorods minimized charge scattering; meanwhile ultrascaled anisotropic morphologies concentrated local electric fields and thereby lowered the barrier height. Enabled by these structural features, we demonstrated field emission density up to 4.1 × 10
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Wang et al. (2024) studied this question.
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