(Invited) Electronic Trap Characterization in QD Devices Using Impedance Analysis Techniques

Colloidal quantum dots (QDs) are semiconductor nanocrystals with dimensions in the range of tens of nanometers. They exhibit unique optical and electronic properties, such as a size-dependent band gap and high absorption cross-section. These properties make them attractive for optoelectronic applications such as photovoltaics, light-emitting diodes (LEDs), and photodetectors. However, QD optoelectronics pose significant challenges due to trap states, which mainly originate from the surface states of nanocrystals. Therefore, it is necessary to analyze the trap states of QDs to understand their electronic properties and optimize their performance in optoelectronic applications. With this understanding, we want to correlate the cause of the trap states with the chemical defect to design better passivation strategies. In this discussion, we will explore the principles of electronic trap analysis in colloidal quantum dots based on impedance analysis techniques as a complementary method to spectroscopy. We will provide examples of electronic trap analysis in PbS QD photovoltaics and InP QD LEDs to demonstrate the effectiveness of this approach. We can electrically probe the QD layers in the device using an impedance analyzer to analyze the energy level and density of trap states. By combining chemical analysis and a theoretical approach with this technique, we attempted to correlate the trap states and chemical defects.