Investigation of Neuromorphic Behaviors in Access Regions-Integrated Van Der Waals Heterostructures

The emergence of neuromorphic devices has disrupted the traditional von Neumann architecture, providing a solution to the challenges of simulating neural parallel processing and power consumption in conventional computer architectures [1]. Access regions (ARs) are strategically created and positioned in proximity to source and drain electrodes, resulting in a channel that does not overlap with the floating gate (FG) [2]. In this study, we investigated ARs integrated van der Waals heterostructural field-effect transistor (AR-VH-FET) device, constructed by vertically stacking several 2D materials. Specifically, molybdenum disulfide (MoS 2 ) served as a channel, hexagonal boron nitride (h-BN) as a tunneling layer, and graphene (Gr) as the FG. We conducted measurements on the transfer and output characteristics to characterize the electrical performance of the AR-VH-FET. Under a fixed V DS , with the application of positive and negative V BG as programming and erasing voltages respectively, we measured device retention and endurance. AR-VH-FET devices not only emulate basic neuromorphic functions but also replicate biological characteristics. References [1] Q. Wang, C. Zhao, Y. Sun, R. Xu, C. Li, C. Wang, W. Liu, J. Gu, Y. Shi, L. Yang, Synaptic transistor with multiple biological functions based on metal-organic frameworks combined with the LIF model of a spiking neural network to recognize temporal information, Microsystems & nanoengineering 9(1) (2023) 96. [2] T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, K. Nagashio, Material and device structure designs for 2D memory devices based on the floating gate voltage trajectory, ACS nano 15(4) (2021) 6658-6668. Figure 1