On the theory of X-ray Laue diffraction in a thermomigration crystalline channel with a doping impurity

X-ray Laue diffraction in a silicon crystal with Si(Al) thermomigration channels has been theoretically considered. Based on the model of elastic fields of atomic displacements in the channel, expressions for the distribution of strains have been obtained to describe diffraction in the Laue geometry. A numerical calculation of the X-ray scattering intensity distribution near a reciprocal lattice point has been performed. The difference between diffraction in a perfect and strained crystal has been shown.