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This is a Quantitative Study study.

Parameter determination of ion-implanted layers of single crystals by integrated dynamical diffractometry

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X-ray diffraction reveals structural defects in Si single crystals ion-implanted with boron ions, indicating layer characteristics.

The method provides precise measurements of amorphous layers and dislocation loops in crystals.
Total integrated intensity data from three asymmetric Bragg reflections is utilized for analysis.
Analysis focuses on the thickness of layers and concentration of dislocation loops in the crystal.
Results have implications for improving the understanding of defect structures in ion-implanted materials.

Nyzkova et al. (2025) studied this question.

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View Full Paper

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Authors

X-ray diffraction reveals structural defects in Si single crystals ion-implanted with boron ions, indicating layer characteristics.

The method provides precise measurements of amorphous layers and dislocation loops in crystals.
Total integrated intensity data from three asymmetric Bragg reflections is utilized for analysis.
Analysis focuses on the thickness of layers and concentration of dislocation loops in the crystal.
Results have implications for improving the understanding of defect structures in ion-implanted materials.

Nyzkova et al. (2025) studied this question.

View Full Paper

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Bookmark