Direct Solution Deposition of Large‐Area Non‐Solvated Fullerene Single‐Crystal Films for High‐Performance n‐Type Field‐Effect Transistors

Fullerene (C 60 ) crystals have attracted considerable attention in the field of optoelectronic devices owing to their excellent performance as n‐type semiconductor material. However, a challenge still remains unbeaten as to the continuous crystallization of non‐solvated C 60 single‐crystal films with high coverage and uniform alignment using low‐cost solution techniques. Here, a facile bar coating method is used to prepare ribbon‐shaped non‐solvated C 60 crystals with a large area (up to centimeters) and high coverage (>95%) by precisely controlling the crystallization process from specific solvents. Benefiting from the non‐solvated crystalline structure, well‐distributed thickness, uniform morphological alignment, and crystallographic orientation, organic field‐effect transistors fabricated from the C 60 single‐crystal films exhibit a high average electron mobility of 2.28 cm 2 V −1 s −1 , along with the coefficient of variance (CV) as small as 13.6%. This efficient manufacturing method will lay a strong foundation for C 60 single‐crystal films to fit into the future high‐performance integrated optoelectronic application.