Enhanced highly bismuth‐doped multicomponent phosphate glass fibers for broadband amplifiers

Abstract Bismuth (Bi)‐doped glass fibers are being developed into next‐generation broadband amplifiers and tunable lasers. Yet, the well‐developed Bi‐doped fiber devices only realize silica‐based optical fibers prepared by the modified chemical vapor deposition method, which faces challenges such as low doping concentration, high cost, intricate device structure, and high preparation difficulty. Here, a novel highly Bi‐doped multicomponent phosphate glass was developed. The high ion solubility of this phosphate glass facilitates achieving a Bi doping concentration of 8 mol%. The introduction of aluminum nitride (a new reducing agent) can create a local reducing environment, further increasing the concentration of low‐valence near‐infrared (NIR) active Bi ions. Furthermore, the resulting enhanced highly Bi‐doped multicomponent phosphate glass with efficient 900–1600 nm NIR emission can be drawn into corresponding optical fibers by a rod‐in‐tube method. Broadband NIR amplified spontaneous emission with a 3 dB bandwidth of 275 nm was achieved in this new fiber. As far as we know, this is the first successful preparation of Bi‐doped multicomponent phosphate glass fiber. Our results indicate that this fiber will be a powerful alternative to Bi‐doped silica‐based fibers for the preparation of related Bi‐doped fiber devices.