Effects of Substrates on the Performance of Pt Thin-Film Resistance Temperature Detectors

Pt thin-film resistance temperature detectors (RTDs) have been fabricated by magnetron sputtering on various substrates, including silica, polyimide (PI) and LaAlO3 (LAO) (100) single crystal. The influences of different substrates on the performance of Pt thin-film RTDs have been studied. It is revealed that the substrates exhibit a significant dependence on the temperature coefficient of resistance (TCR). Silica, PI and LAO substrates yield TCRs of 3.2 × 10−3, 2.7 × 10−3 and 3.4 × 10−3 /K, respectively. The Pt thin-film RTDs on LAO substrate exhibit a significantly larger TCR, compared to most of the other reported values. These devices also demonstrate a fast response time of 680 μs, which is shorter than that of many other reported RTDs. Furthermore, Pt thin-film RTDs on PI substrates could serve as flexible detectors, maintaining a consistent linear relationship between resistance and temperature even when bent.