Ultra-high electron mobility in Sn-doped two-dimensional Ga₂O₃ modified by biaxial strain and electric field

Abstract 2D Ga 2 O 3 exhibits overwhelming advantages over its bulk counterpart, whereas manipulating the carriers is rare. We report strain-dependent electronic structures and transport properties of Sn-doped 2D Ga 2 O 3 using first-principles calculations with deformation potential theory. The band gaps are tunable from 2.23 eV to 1.20 eV due to the strain-mediated σ * anti-bonding and π bonding state variations. Specifically, ultra-high electron mobility of 22579.32 cm 2 V −1 s −1 is predicated under 8% tensile. Further electric field modulations suggest the retaining of band gap and effective mass. These results highlight its property manipulations and nanoscale electronic applications.