Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 2024AIP AdvancesOpen Access

Development of high-operation-temperature (up to 150 K) mid-wave infrared photodetectors based on p–n junctions in PbTe single crystals

View Full Paper
Ask AI
Bookmark
Share

Authors

MAM. AuslenderBDBogdan DzundzaETE. Towe

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Auslender et al. (2024) studied this question.

synapsesocial.com/papers/68e5dd94b6db643587573152https://doi.org/10.1063/5.0220055
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Deep and resonance states in A <sup>IV</sup> B <sup>VI</sup> semiconductors1985 · 153 citations
  2. 2Mixed-valence impurities in lead telluride-based solid solutions2002 · 194 citations
  3. 3Highly efficient n-type PbTe developed by advanced electronic structure engineering2020 · 59 citations
  4. 4Influence of Deformation on Pb<sub>1−<i>x</i></sub>In<sub><i>x</i></sub>Te<sub>1−<i>y</i></sub>I<sub><i>y</i></sub> and Pb<sub>1−<i>x</i>−<i>y</i></sub>Sn<sub><i>x</i></sub>In<sub><i>y</i></sub>Te Films2020 · 9 citations
  5. 5Electrical and optical properties of PbTe p-n junction infrared sensors2006 · 39 citations