Introducing various absorption materials to the IGZO thin film transistor (TFT) forms new device approach for making high performance photodetectors and image sensors. In this study, a 30 μm × 30 μm IGZO phototransistor with quasi-2D perovskite absorption layer is demonstrated, which attains a high responsivity reaching 1.5 × 10 5 A W −1 and a well detectivity of 3.07 × 10 14 Jones under 87.4 nW cm −2 illumination at 520nm. This approach combines the merits of low turn-off dark current of the IGZO TFT and the high optoelectronic properties of the perovskite photo absorption layer, which is very promising for forming high resolution low cost flat-panel image sensors.
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Hu et al. (2024) studied this question.
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