Thermal breakdown characteristics and damage mechanisms of novel GaN HEMT aviation nanodevices in high-intensity radiation fields

This paper designs a novel GaN HEMT aviation nanodevice through the Sentaurus-TCAD simulation software. The thermal breakdown characteristics of the device in a high-intensity radiation field environment are investigated. The impact of parameters in the channel and barrier layer on the breakdown of the device is analyzed. The electromagnetic environmental effects of the device are verified, and the damage law of the device is obtained. By injecting high-power microwave signals into the gate, the strength of the internal electric field, concentration of the current, and peak temperature of the device are analyzed to assess their impact on device damage. Research has shown that the doping concentration, structural size, and aluminum doping ratio of the barrier layer significantly affect the distribution of internal field strength and carrier concentration within the device, thereby influencing its breakdown characteristics. The concentrations of Al and impurity doping in the barrier layer affect the device’s breakdown characteristics. Consequently, this novel GaN HEMT aviation nanodevice exhibits a higher breakdown voltage and stability, making it more suitable for application in high-frequency harsh environments.