Electrophysical characteristics of film based on 2H-5,10,15,20-tetrakis(para-aminophenyl)porphyrin

Films of 2H-5,10,15,20-tetrakis (para-aminophenyl) porphyrin were formed from dimethyl sulfoxide via superoxide-assisted electrochemical deposition. The potential regions where the films are formed and the efficiency and dynamics of the film deposition process are estimated by the quartz microbalance method. Ten-fold potential cycling produced smooth continuous films of electropolymerized porphyrin with a thickness of about 100 nm. The average film roughness of a sample of 3 × 3 μm was 2.4 nm. Using the Mott-Schottky method was determined that the obtained film possesses p-type conductivity with a donor density of 8.7 × 10[Formula: see text] cm[Formula: see text] and a flatband potential of about 1.01 V.