Electrical properties of unintentionally doped β-Ga₂O₃ (010) thin films grown by low-pressure hot-wall metalorganic chemical vapor deposition

We investigated the electrical properties of unintentionally doped (UID) Ga 2 O 3 (010) layers grown by low-pressure hot-wall metalorganic chemical vapor depositions from device characteristics of Schottky barrier diodes (SBDs) fabricated on them. Highly resistive properties of the UID Ga 2 O 3 layers were confirmed from current–voltage characteristics. The specific on-resistance of the SBD with the most resistive UID Ga 2 O 3 layer was 2.2 × 10 7 Ωcm 2 . Capacitance–voltage characteristics revealed that most of the SBDs had complete depletion of the UID layers at thermal equilibrium, indicating that their residual effective donor densities were less than 3.0 × 10 13 cm −3 .