Enhancement-mode Ga₂O₃ FETs with unintentionally doped (001) β-Ga₂O₃ channel layer grown by metal-organic chemical vapor deposition

High-quality unintentionally doped (UID) (001) β -Ga 2 O 3 homoepitaxial films were grown on native substrates through metalorganic CVD. The surface parallel grooves were repaired under low temperature and pressure conditions, reaching the surface roughness of 2.22 nm and the high electron mobility of 74.6 cm 2 /Vs. Enhancement-mode MOSFETs were fabricated on the UID β -Ga 2 O 3 film, showing a positive turn-on threshold gate voltage of 4.2 V and a breakdown voltage of 673 V. These results can serve as a reference for (001)-oriented lateral Ga 2 O 3 power transistors and may contribute to the development of Ga 2 O 3 power devices.