SCAPS modeling and performance analysis of AZO/SnS₂/CZTS solar cells

Due to outstanding optoelectronic parameters, the quaternary compound copper-zinc-tin-sulfide (Cu 2 ZnSnS 4 ) is considered a promising absorber for photovoltaic cell applications. This work aims to numerically model and simulate the photovoltaic performance of AZO/SnS 2 /CZTS solar cells using SCAPS-1D software. The effect of various parameters such as thickness and doping concentration of absorber, buffer and window layers, bandgap and bulk defect density of absorber layer, CZTS/SnS 2 interface defect density, working temperature, series and shunt resistance on the performance of the solar cell structure are analyzed and optimized to achieve better performance. Maximum efficiency of 24.8% (Voc = 0.95 V, Jsc = 30.1 mA/cm 2 , and FF = 86.4%) is achieved for the simulated device. By incorporating an optimized 0.2 µm thick MoS 2 back surface field (BSF) layer, efficiency rises to 41.2% (Voc = 1.4 V, Jsc = 32.38 mA/cm 2 , and FF = 90.9%). The proposed research may guide fabricating high-performance and cost-effective CZTS-based thin film photovoltaic cells where MoS 2 can be used as a promising novel BSF layer.