Thermally activated delayed fluorescence (TADF) materials are expected to address triplet‐related losses in electrically driven organic lasers, as the electrically generated triplets in the materials can be converted to radiative singlets through reverse intersystem crossing (RISC). This offers a way to bypass triplet absorption and annihilation in organic semiconductor lasers (OSLs). In this work, two versatile TADF emitters 4tCzPz and 4αCbPz for application in organic light‐emitting diodes (OLEDs) and OSLs are presented. Both emitters possess moderately high singlet‐triplet energy gap, Δ E ST (≈0.30 eV) and show high photoluminescence quantum yields, Φ PL , in solution and solid‐state and prominent stimulated emission features in solution. Films of 4tCzPz and 4αCbPz doped in mCBP show an amplified spontaneous emission (ASE) threshold of 41.0 and 44.9 µJ/cm 2 , respectively. The OLEDs with 4tCzPz and 4αCbPz emit with peak wavelengths of 492 and 475 nm, respectively, and show corresponding maximum external quantum efficiencies, EQE max , of 24.6 and 21.3%. The research shows that D‐A TADF materials hold significant potential not only as emitters for OLEDs but also in OSLs.
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Chen et al. (2024) studied this question.
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