Dielectric‐Doped 2D Tellurium Diodes for Zero‐Bias Radio Frequency Power Detection

This work presents a 2D tellurium (Te)‐based diode that exploits the doping achieved by atomic layer deposited (ALD) Al 2 O 3 to enhance its rectifying performance. The proposed device comprises a Schottky junction that is dielectric‐doped to significantly reduce the reverse bias current. A boosted current responsivity four times higher compared to that of undoped devices is achieved, maximizing the performance for radio frequency (RF) power detectors. The application measurement results demonstrate sensitivities as low as −45 dBm, and at −30 dBm RF input power outstanding tangential responsivities up to 6.5 kV W –1 , 4.3 kV W –1 , and 650 V W –1 at 0.5, 1, and 2.5 GHz, respectively, while reaching linear dynamic range (DR) of over 30 dB. These are the highest reported values for 2D‐based material devices by almost two orders of magnitude. Furthermore, the DR is ≈10 dB larger compared to state‐of‐the‐art power detectors based on bulk semiconductors.