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This is a Experimental Study study.

September 16, 2025

In situ synthesis of Te/Si heterojunction photodetectors enabling ultra-broadband UV-vis-IR photoelectric conversion

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This research demonstrates high-performance photodetectors using tellurium on silicon, achieving robust photoelectric conversion.

Photodetectors show ultra-broadband response from ultraviolet to near-infrared, enhancing device versatility.
An outstanding on/off ratio of ~108 was achieved, leading to efficient separation of photocarriers.
High external quantum efficiency of 76350% was measured, indicating excellent performance in light detection.
PLD technique enables the scalable production of high-quality tellurium nanofilms for effective photodetector applications.

Lu et al. (2025) studied this question.

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