The straight bandgap, high electron mobility, and good light absorption properties of gallium arsenide (GaAs) nanowires (NWs) make them great candidates for infrared photodetectors. In this study, we describe the synthesis of high-quality single-crystal GaAs NWs by solid-source chemical vapor deposition (SSCVD) and evaluate their photodetection performance. The prepared GaAs NWs exhibit excellent optoelectronic properties at a wavelength of 792 nm, with a photoresponsivity(R) of 3.65 A/W and a detectivity (D*) of 3.68×10¹¹ Jones, as well as excellent sensitivity and reproducibility. These findings emphasize the potential application of GaAs NWs in photodetector technology.
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Ma et al. (2024) studied this question.
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