Nonlinear behavioral analysis of diode model using Volterra series

This article proposes a new nonlinear behavioral analysis of the Spice diode model by using Volterra series theory, in which the expression of the third‐order intermodulation was expressed. Moreover, the impact on the behavior of diode CV characteristic parameters Zero‐bias Junction capacitance C jo , gradient coefficient M , and built‐in potential V j are discussed. Two‐tones harmonic balance simulations are performed with the hpeesofsim circuit simulator. Results are consistent with the Volterra series analysis, showing the rationality and validity of this behavioral modeling method.