A new empirical nonlinear model for HEMT and MESFET devices

A large-signal model for HEMTs and MESFETs, capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances, is proposed. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different delta -doped pseudomorphic HEMTs on GaAs and lattice matched to InP, and a commercially available MESFET. Measured and modeled DC and S-parameters are compared and found to coincide well.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>