Silicon‐Based 850 nm GaAs/GaAsP‐Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers

This is the authors' abstract. We don't add key points for this paper.

Quantum Well Lasers Benefitting from the interaction of the GaAs/GaAsP strained quantum well and InAlAs active region dislocation blocking layer, in article number 2300348, Jian Li and co-workers show that the threading dislocation penetration to the quantum well region of the silicon-based quantum well lasers can be bended and blocked. By the introduction of this strain compensate stress control structure, the 850 nm room temperature continuous wave emitting silicon-based quantum well laser exhibits a 94.2 mW power output, a 715 Acm–2 threshold current density, and enhanced reliability.