Gain and Threshold Improvements of 1300 nm Lasers Based on InGaAs/InAlGaAs Superlattice Active Regions

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A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6 cm−1), low transparency current density of ~500 A/cm2, together with 46 cm−1 modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained In0.74Ga0.26As/In0.53Al0.25Ga0.22As superlattice. Characteristic temperaturesT₀andT₁were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength.