Resistive Switching Memristive Devices In article number 2400019, Wen-Wei Wu and co-workers reveal a perovskite–brownmillerite topotactic phase transformation within the LaCoOx layer through scanning transmission electron microscopy observations. The resistive switching mechanism is controlled by the injection and extraction of oxygen ions and facilitates the reversible transition between low and high resistance states. This new material's exceptional characteristics make it a candidate for memory technologies.
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