This paper proposes a Low Dropout Regulator (LDO) circuit with high-speed current detection. The current detection circuit utilizes a latch-based structure to expedite comparisons and perform detection. Its primary objective is overcurrent protection in certain practical applications, achieving current limit functionality. The LDO circuit structure can stably provide a 5 V output voltage under a 9 V input voltage, with a maximum output current limit of 70 mA. In practical applications, the circuit can function with a load current of 40 mA, resulting in an output voltage (V out ) of 4.96 V. In the design of the LDO circuit, the Error Amplifier (EA) module departs from conventional internal structures, employing a dual-potential folded cascode common-gate common-source amplifier. This choice enhances parameters such as EA gain and Power Supply Rejection Ratio (PSRR). The gain achieves 98 dB, and the low-frequency PSR reaches 92 dB. Simultaneously, the dual potential configuration significantly economizes the layout area required in practical implementations. The LDO is designed using a 0.18 μm standard CMOS process.
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He et al. (2024) studied this question.
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