Endurance characteristics of HZO FeFETs with different interface layers

This paper investigates the endurance characteristics of Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric field-effect transistors (FeFETs) with SiO 2 and Y 2 O 3 interface layers. FeFETs have emerged as a promising candidate for high-density ferroelectric memory development, featuring advantages like non-destructive readout, non-volatility, and high stability. Despite the advancements in HfO 2 -based FeFETs, their endurance, a key performance indicator, remains a challenge. We present a detailed study on the effects of program/erase (P/E) cycling on the electrical characteristics of HZO FeFETs with SiO 2 and Y 2 O 3 interface layers, highlighting the wake-up and fatigue phenomena observed. Our investigation reveals the intrinsic mechanisms underlying these phenomena and the impact of interface layer material on the endurance behavior of HZO FeFETs.