Investigation of AlGaN/GaN HEMT trap barrier height variation under mechanical stress and voltage stress

The variation of the trap barrier height of AlGaN/GaN high electron mobility transistor (HEMT) under the mechanical stress and voltage stress was investigated. It was found that the compressive stress and small voltage stress mitigated the slowing down of the intra-layer strain, and the decrease of the gate leakage current was related to the increase of the trap barrier height. Tensile stress and large voltage stress exacerbated the intra-layer strain, and the additional traps due to the inverse piezoelectric effect caused an increase in the gate leakage current, which was verified by the decrease in the trap barrier height.