Despite the rapid progress in efficiency, PSCs encounter substantial challenges regarding durability and scalability. Inverted p-i-n PSCs provide enhanced long-term operating stability over the conventional n-i-p structures but lag in PCE [3]. This limitation is mainly due to the interface between the perovskite light-absorbing layer and charge transport materials, where energy band misalignment and energy level pinning hinder PCE. Furthermore, surface defects exacerbate these constraints. In the endeavor to improve performance of PSCs, surface passivation is crucial for reducing nonradiative recombination at the interface. A recent study by Hao Chen and colleagues, published in the journal Science, introduces an innovative interface passivation strategy for p-i-n PSCs that could set a new benchmark for efficiency and stability [4]. This commentary assesses the potential impact of dual-site-binding ligands on PSCs and anticipates their transformative effect on the field.
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Wei et al. (2024) studied this question.
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