All-optical modulator with photonic topological insulator made of metallic quantum wells

All-optical modulators hold significant prospects for future information processing technologies for they are able to process optical signals without the electro-optical convertor which limits the achievable modulation bandwidth. However, owing to the hardly-controlled optical backscattering in the commonly-used device geometries and the weak optical nonlinearities of the conventional material systems, constructing an all-optical modulator with a large bandwidth and a deep modulation depth in an integration manner is still challenging. Here, we propose an approach to achieving an on-chip ultrafast all-optical modulator with ultra-high modulation efficiency and a small footprint by using photonic topological insulators (PTIs) made of metallic quantum wells (MQWs). Since PTIs have attracted significant attention because of their unidirectional propagating edge states, which mitigate optical backscattering caused by structural imperfections or defects. Meanwhile, MQWs have shown a large Kerr nonlinearity, facilitating the development of minimally sized nonlinear optical devices including all-optical modulators. The proposed photonic topological modulator shows a remarkable modulation depth of 15 dB with a substantial modulation bandwidth above THz in a tiny footprint of only 4 × 10 µm