June 21, 2024Advanced Optical Materials

PtSe₂/InP Mixed‐Dimensional Schottky Junction for High‐Performance Self‐Powered Near‐Infrared Photodetection

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Authors

JWJiang WangZibo Vocational Institute CFCan FuAnhui University MJMengting JiangAgency for Science, Technology and Research

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Implication

Experimental study demonstrates a self-powered PtSe2/InP Schottky junction near-infrared photodetector, highlighting new opportunities for hybrid two-dimensional optoelectronic systems.

Key Points

A self-powered Schottky junction photodetector operates at zero bias with an ultralow dark current of 45 pA, driven by a strong built-in electric field.
Peak responsivity reaches 0.718 A W−1 alongside an exceptional detectivity of 4.37 × 10 12 Jones, demonstrating high sensitivity to near-infrared light.
TCAD simulations confirm that strong interface electric fields drive self-powered detection, highlighting new paths for integrating hybrid 2D materials.

Cite This Study

Wang et al. (2024) studied this question.

synapsesocial.com/papers/68e63c11b6db6435875cde41 https://doi.org/10.1002/adom.202401035

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Implication

Experimental study demonstrates a self-powered PtSe2/InP Schottky junction near-infrared photodetector, highlighting new opportunities for hybrid two-dimensional optoelectronic systems.

PtSe₂/InP Mixed‐Dimensional Schottky Junction for High‐Performance Self‐Powered Near‐Infrared Photodetection

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Member takes

Implication

Key Points

Cite This Study

PtSe₂/InP Mixed‐Dimensional Schottky Junction for High‐Performance Self‐Powered Near‐Infrared Photodetection

Discussion

Member takes

Implication

Key Points

Cite This Study

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