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We report magnetization changes generated by an electric field in ferromagnetic Ga₁₋ₓMnₓN grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Crₓ(Bi1-ySby)₁₋ₓTe₃, in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature.
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Sztenkiel et al. (2024) studied this question.
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