Dielectric properties of disordered A₆B₂O₁₇ (A = Zr; B = Nb, Ta) phases

We report on the structure and dielectric properties of ternary A 6 B 2 O 17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase‐homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500°C. Crystal structure, microstructure, chemistry, and dielectric properties are characterized by X‐ray diffraction and reflectivity, atomic force microscopy, X‐ray photoelectron spectroscopy, and capacitance analysis, respectively. We observe relative permittivities approaching 60 and loss tangents <1 × 10 −2 across the 10 3 –10 5 Hz frequency range in the Zr 6 Nb 2 O 17 and Zr 6 Ta 2 O 17 phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics.