Compact 1.31 μm-emission In0.45Ga0.55As/ In0.25Ga0.75As photonic crystal nanoridge laser monolithically grown on 300 mm silicon substrate

An ultra-compact 1.31μm-emission photonic crystal (PC) nano-ridge laser directly grown on a silicon substrate without thick buffer layers achieves lasing with a cavity length as small as 50 μm at a remarkably low pumping threshold of 4.42 kW/cm2. This laser exhibits a lasing peak with side-mode suppression ratio of over 17 dB and a linewidth as narrow as 1.47 nm under 22.91 kW/cm2 pulsed pumping.