The magnetoresistance, MR of a well-characterized bulk FeSi sample was studied. It is shown that after a chaotic behavior at temperatures below 6 K, the magnetoresistance of FeSi becomes regular functions of temperature and magnetic field. The observations suggest that the mean free path of carriers defines along with the unknown negative component the negative values of magnetoresistance of FeSi then approaching zero values at high temperatures.
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Petrova et al. (2024) studied this question.
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