Solcore simulation of a GaInP/InGaAs/Ge solar cell

Recently, multi-junction (MJ) solar cells have been researched extensively, due to their potential of achieving improved performance and a higher efficiency as compared to single-junction cells. Various architectures were proposed, and different simulation programs were employed in their analysis. In this paper, we characterized and simulated a high-efficiency GaInP/InGaAs/Ge solar cell, using the software Solcore, a Python-based library. We obtained the I-V characteristics of the cell, at illumination and dark conditions, respectively, and at different temperatures, the carrier density characteristics, and the external quantum efficiency as a function of the wavelength. We estimated the electrical parameters (open-circuit voltage, short-circuit intensity, fill factor and power conversion efficiency) as a function of the temperature (from 0 to 90°C) and of the base layer thickness, comparatively, for several single-junction cells, two alternatives of two-junction cells and the three-junction solar cell. As compared to previous research attempts in the field, we used a different software approach, we evaluated different parameter variations and obtained improved results for the efficiency of the cell. The proposed solar cell can be further improved by the optimization of the junction thickness and modification of doping levels in the layers.