Defects analysis of radiation damage mechanism for IMM triple-junction solar cell under 1 MeV electron irradiation

Inverted metamorphic (IMM) GaInP/GaAs/InGaAs rigid triple-junction solar cells under 1 MeV electron irradiation at various fluences were investigated theoretically. By fitting the electrical and optical parameters of solar cells with experimental results at the fluence ranging from 1 × 10 14 e cm −2 to 1 × 10 15 e cm −2 , basic trap information was obtained, and then the minority carrier lifetime and trap concentration of sub-cells at various fluences were also calculated. The defects analysis of IMM triple-junction solar cell presented in this work could help understanding the radiation damage mechanism of 1 MeV electron irradiation.