Self-powered filterless narrowband AgNWs@ZnO:Ga/AlN/InGaN heterojunction photodetector for ultraviolet light intensimeter application

Self-powered high-performance photodetectors (PDs) featuring specific wavelengths are currently in high demand across various optoelectronic fields. Herein, we present a filter-free and self-biased narrowband PD, which contained a one-dimensional Ga-doped ZnO micro-crystal with surface-coated Ag nanowires, an InGaN film, and an AlN layer. The PD exhibits superior performance, containing a responsivity of 268.0 mA/W and a detectivity of 8.05 × 1011 Jones at 360 nm. Particularly for its narrowband photodetection (≤30 nm) and rapid response speed (100/700 μs), the PD enabled the development of a highly sensitive ultraviolet light intensimeter for monitoring weak signals (4–1500 μW/cm2) in combination with specially designed back-end circuits. Given its compact size and low relative error (≤1.5%), the rational design strategy can also be extended to other light detection systems, opening up a constructive way for the development of low-cost, high-sensitivity narrowband light detection.