Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier

In this study, we propose a polarized electron blocking layer (EBL) structure using AlxGa1−xN/AlxGa1−xN to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). Our findings indicate that this polarized EBL structure significantly improves IQE compared to conventional EBLs. Additionally, we introduce an electric-field reservoir (EFR) optimization method to maximize IQE. Specifically, optimizing the polarized EBL structure of AlxGa1−xN/AlxGa1−xN enhances the hole drift rate, resulting in an IQE improvement of 19% and an optical output power increase of 186 mW at a current of 210 mA.