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Simulation study demonstrates enhanced optical power and quantum efficiency in AlGaN ultraviolet LEDs, indicating that graded blocking layers mitigate carrier leakage.
To alleviate electron leakage, the effect of electron blocking layer (EBL) structures on the optical performance of AlGaN‐based ultraviolet light‐emitting diodes is simulated and compared. The results indicate that the optimized composition‐graded EBL structure can effectively improve the energy band structure and enhance the radiative recombination rate within the active region. Compared with Device A using a reference EBL structure, Device D using a multi‐layer composition‐graded EBL structure shows a 41.62% increase in peak internal quantum efficiency (IQE) and a 343.40% increase in light output power (LOP) at 200 mA. The improved light properties are mainly due to the fact that the multi‐layer composition‐graded EBL structure can effectively alleviate polarization effects, reduce electron leakage, increase hole injection, and thus achieve an increase in luminous efficiency.
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Feng et al. (2026) studied this question.
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