Deep-UV Nanowire LED with Step-Graded n-Type Electron Blocking Layer and Al₂O₃ Nanoparticles for Enhanced Performance

We have demonstrated a novel n-type AlInGaN electron blocking layer (EBL) as opposed to the more common ptype AlGaN EBL for deep ultraviolet (DUV) AlGaN/GaN nanowire light-emitting diodes (LEDs). Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> nanoparticles, which are placed all over the substrate, are used to design the nanowire. The proposed nanowire is made to emit light with a 265 nm wavelength without reducing the effectiveness of hole injection. Reduced electron leakage into the p-region, more effective hole activation and hole injection, higher generating power, and increased internal quantum efficiency (IQE) are all the results of improved carrier transport in the step-graded n-type EBL structure. Furthermore, the carrier wave functions overlap is improved as a result of the specifically created EBL's reduction of the quantum confined stark effect in the active region. Computer-aided design (TCAD) with Atlas technology is used to simulate the device construction. By shifting from ordinary p-type EBL to step-graded n-type EBL, the efficiency increases from 38.76% to 50.05%. Additionally, compared to the standard structure, our suggested structure has an efficiency droop of 2.47%, which is notably 4.2 times lower.