Integrated Polarization-Field Mitigation and Electron Hole Wave-function Overlap Improvement in UVC LEDs

This study suggests enhancing the performance of Al-DUV-LED by two thicker AlGaN layers of Proposed V shape combination composition grading in L2 (Al 0.5-0.80 Ga 0.5-0.3 N) / L1 (Al 0.8-0.5 Ga 0.3-0.5 N) EBL and (Al 0.6-0.5 Ga 0.4-0.5 N) LQB and size have been decreased to 6 nm, graded in LQB. We investigations of DUV LED structures, such as conventional designs versus those with V shape combination composition grading EBL and LQB, focus on optimizing carrier confinement, reducing efficiency droop, and enhancing EQE. The graded AlGaN EBL and LQB reduce polarization discontinuities by generating distributed polarization-induced bulk charges instead of immediate interface charges. This deteriorates the internal polarization field, smooths the energy bands, decreases electron leakage, and enhances hole injection into the MQWs. Proposed structure increase the EQE from 3.2 % to 6.2 %, IQE is 38 % increased to 69 %, carrier inject efficiency is 52 % goes up to 96 % while voltage is decreases 6.5V to 4.7V. The proposed structure control the polarization-induced electric field within the p-type EBL, improving hole injection and carrier transport in DUV LEDs.