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June 6, 2024ACS Applied Electronic MaterialsOpen Access

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

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Authors

SBShuvodip BhattacharyaAdvanced Materials and Devices (United States)SJSteve JohnstonNational Renewable Energy LaboratoryRBRobert J. BodnarVirginia Tech

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Bhattacharya et al. (2024) studied this question.

synapsesocial.com/papers/68e65e2bb6db6435875ec889https://doi.org/10.1021/acsaelm.4c00347
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