Design of 25-32 GHz low noise amplifier in a 55nm CMOS silicon-on-insulator technology

Low noise amplifiers (LNA) play an important role in modern millimeter wave systems. This work presents a LNA designed in a 55nm complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) technology. The LNA operates in the Ka-band frequency range of 25-32 GHz. The LNA employs a two-stage cascode architecture with wideband matching network. It achieves a gain range of 17.2-17.7 dB, a noise figure (NF) range of 2.6-2.9 dB and an input 1 dB compression point (IP1dB) of -12 dBm with a dc power consumption of only 29 mW.