CdTe‐based thin film solar cell has been modeled and enumerated with a thin CuInTe 2 (CIT) current booster layer. CdTe‐based n‐CdS/p‐CdTe/p + ‐CIT/p ++ ‐WSe 2 heterojunction device is evaluated for the highest performance. It is revealed that physical parameters such as thickness, doping, and defects of the CIT layer have a significant influence on the performance of the CdTe solar cell. The device shows an efficiency of 37.46% with an open‐circuit voltage, V OC , of 1.102 V, short‐circuit current density, J SC , of 38.50 mA cm −2 , and fill factor, FF, of 88.30%. The use of the photon recycling technique with a Bragg reflector with 98% back and 95% front reflectance only provides an efficiency of ≈44.3% with a current of 45.4 mA cm −2 . These findings are very hopeful for the production of efficient CdTe solar cells in the near future.
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Hossain et al. (2024) studied this question.
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